Method of heteroepitaxial growth of beta silicon carbide on silicon
摘要
A method and an apparatus have been developed to deposit heteroepitaxial beta-silicon carbide films on silicon using bias-assisted hot filament chemical vapor deposition (BA-HFCVD). The apparatus includes a graphite plate as the carbon source and the silicon substrate as the silicon source. Hydrogen was the only feeding gas to the system.
申请公布号
US5879450(A)
申请公布日期
1999.03.09
申请号
US19970910205
申请日期
1997.08.13
申请人
CITY UNIVERSITY OF HONG KONG
发明人
LEE, SHUIT TONG;LEE, CHUN SING;IGOR, BELLO;LAM, YAT WAH;WOO, HIN KOON