发明名称 Semiconductor package having a ground or power ring and a metal substrate
摘要 A semiconductor package is provided that has a rigid metal substrate and a dielectric layer covering a first portion of the rigid metal substrate, with a second portion of the rigid metal substrate being substantially free of the dielectric layer. A semiconductor device is electrically bonded to the second portion of the rigid metal substrate and metal circuit traces defining electrical paths are formed on the dielectric layer, at least one of which contacts the rigid metal substrate through at least one via in the dielectric layer. Additionally, a method is provided for grounding a semiconductor device and at least one circuit trace on a rigid metal substrate substantially covered by a dielectric layer, which includes creating at least one via in the dielectric layer using a laser and creating circuit traces on the dielectric layer, at least one of which contacts the rigid metal substrate through at least one of the vias. The semiconductor is electrically bonded to the rigid metal substrate in an aperture in the dielectric layer.
申请公布号 US5877551(A) 申请公布日期 1999.03.02
申请号 US19960752193 申请日期 1996.11.18
申请人 OLIN CORPORATION 发明人 TOSTADO, SALVADOR A.;BRATHWAITE, GEORGE A.;HOFFMAN, PAUL R.;ERFE, GEORGE A.;PEDRON, JR., SERAFIN P.;RAFTERY, MICHAEL A.;RAMAKRISHNA, KAMBHAMPATI;RAMIREZ, GERMAN J.;STRAUMAN, LINDA E.
分类号 H01L21/48;H01L23/14;(IPC1-7):H01L23/053;H01L23/04 主分类号 H01L21/48
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