发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing such a semiconductor device which has high reliability obtained from stress relief and the like and which can reduce the number of process steps and the equipment cost, and whose manufacturing cost is low. SOLUTION: A low elastic modulus layer 20 is provided on the main surface of a semiconductor substrate 10, the layer 20 having an opening for an electrode region where an element electrode is arranged. Lands 32 serving as external electrodes are provided on the layer 20, and a metal wiring pattern 33 integrating wires 31 for connecting pads 30 on the element electrode to the lands 32 is formed. A solder resist film 50 having an opening for part of each land 32 is formed, and a metal ball 40 is provided on each land 32 in the opening. The layer 20 absorbs stresses such as thermal stress accompanying the heating and cooling of the semiconductor device, so that breakage of the wires 31 can be prevented.
申请公布号 JPH1154649(A) 申请公布日期 1999.02.26
申请号 JP19980069675 申请日期 1998.03.19
申请人 MATSUSHITA ELECTRON CORP 发明人 SHIMOISHIZAKA NOZOMI;SAWARA RYUICHI;NAKAMURA YOSHIFUMI;KUMAGAWA TAKAHIRO;MURAKAMI SHINJI;HARADA YUTAKA
分类号 H01L23/12;H01L23/31;H01L23/485 主分类号 H01L23/12
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