| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent element breakdown without influencing element operation, by making a film out of a specific material of a high breakdown voltage for covering at least a side surface exposing a junction surface to the outside. SOLUTION: A semiconductor substrate wherein a P-type region 1 made out of a silicon semiconductor, an I layer region 2 and an N-type region 3 are laminated is prepared for example. A nitride film 6 is deposited on the surface of the P-type region 1, and a mesa section is formed by etching the P-type region 1 and the I layer region 2 using the nitride film 6 as a mask, until the N-type region 3 is exposed. Next on the whole surface, thin films 7 are formed out of material of a large withstand voltage containing one of diamond, diamondlike carbon, silicon carbide, aluminum nitride, gallium nitride or indium gallium nitride. The thicknesses of these thin films are set to values at which the I layer region 2 becomes a current pass and the thin films 7 do not, when a pulselike voltage is applied between metal electrodes 4, 5 in accordance with the resistivities.</p> |
