Semiconductor memory device having a memory cell capacitor and a fabrication process thereof

摘要

A method for fabricating a dynamic random access memory comprises the steps of determining a design rule for word lines and bit lines and further for a pattern that extends from a memory cell array region to a peripheral region across a stepped boundary, determining a step height of the stepped boundary based upon the design rule, determining a capacitance of the memory cell capacitor based upon the step height of the stepped boundary, determining a parasitic capacitance of a bit line such that a ratio of the parasitic capacitance to the capacitance of the memory cell is smaller than a predetermined factor, and determining the number of the memory cells that are connected to one bit line based upon the parasitic capacitance of the bit line.