发明名称 Method of forming wiring structure of semiconductor device
摘要 A wiring structure of a semiconductor device includes a substrate; a first conductive layer formed in the substrate; an insulation film formed on the substrate including the first conductive layer and having a contact hole therein through which the upper surface of the first conductive layer is exposed, wherein the contact hole includes an upper contact hole and a lower contact hole having a shape undercut into the insulation film and thus being wider than the upper contact hole; and a second conductive layer formed on the insulation film so as to thoroughly fill the contact hole and electrically connected to the first conductive layer.
申请公布号 US5874357(A) 申请公布日期 1999.02.23
申请号 US19960770158 申请日期 1996.12.19
申请人 LG SEMICON CO., LTD. 发明人 JUN, YOUNG-KWON;KIM, YONG-KWON
分类号 H01L21/28;H01L21/311;H01L21/768;H01L23/522;(IPC1-7):H01L21/476 主分类号 H01L21/28
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