发明名称 |
Method of forming wiring structure of semiconductor device |
摘要 |
A wiring structure of a semiconductor device includes a substrate; a first conductive layer formed in the substrate; an insulation film formed on the substrate including the first conductive layer and having a contact hole therein through which the upper surface of the first conductive layer is exposed, wherein the contact hole includes an upper contact hole and a lower contact hole having a shape undercut into the insulation film and thus being wider than the upper contact hole; and a second conductive layer formed on the insulation film so as to thoroughly fill the contact hole and electrically connected to the first conductive layer.
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申请公布号 |
US5874357(A) |
申请公布日期 |
1999.02.23 |
申请号 |
US19960770158 |
申请日期 |
1996.12.19 |
申请人 |
LG SEMICON CO., LTD. |
发明人 |
JUN, YOUNG-KWON;KIM, YONG-KWON |
分类号 |
H01L21/28;H01L21/311;H01L21/768;H01L23/522;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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