| 摘要 |
PROBLEM TO BE SOLVED: To produce a photosensitive permanent mask pattern with no problem on development time, resolution and residue on development by adding a specified compd. to a developer. SOLUTION: A photosensitive permanent mask material contg. a resin having an acid value of 20-3,000 and a wt. average mol.wt. of 400-500,000, a photopolymerizable compd. having one or more ethylenically unsatd. bonds in one molecule and a photopolymn. initiator is formed as a film on a substrate and imagewise irradiated with active light, the exposed part is photoset and the unnecessary part is removed by development with a developer contg. a compd. represented by formula I or II to produce the objective photosensitive permanent mask pattern. In the formulae, R<1> is 1-20C alkyl and R<2> is 1-20C alkylene. Since the compd. represented by the formula I or II has surface activity and enhances the affinity of the developer for the mask material, the generation of residue on development is prevented. |
