| 摘要 |
A semiconductor device of a source-drain symmetrical structure capable of eliminating the substrate-floating effect of a MOS transistor formed on a SOI (silicon-on-insulator) substrate, and a method of producing the same. As shown in the figure, in a SOI-MOS transistor a single crystal silicon layer (3) as a minority carrier path is secured among the source/drain (9, 10) and a buried oxide film (2), and a recombination center region (20) is formed under an opening (19) for connecting the source and the drain in order to annihilate minority carriers in this portion. Such a source-drain symmetrical structure is obtained for each of pMOS and nMOS, and the substrate-floating effect is eliminated.
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