Layout for building a solar cell for polycrystalline amorphous semiconductors

摘要

A substrate (S) is covered successively with a transparent conductive layer (CL), an insulating layer (IL1), a polycrystalline or amorphous semiconductor layer (SL) and a further transparent conductive layer (CL). Contact with the semiconductor layer is achieved through contact slots (CH). In the contact slot (CH) the interface between the conductive layers and the polycrystalline or amorphous semiconductor layer can vary from the upper surface of the insulating layer to its lower surface. This layout can be mirrored on the horizontal axis of symmetry, so the sequence of layers including the contact slots can be re-arranged. The semiconductor layer is polycrystalline or amorphous, p- or n-conductive and fitted with vertical crystal particle boundaries in the polycrystalline semiconductor. The first insulating layer (IL1) is replaced with positive charge carriers, the second insulating layer (IL2) with negative ones.