| 摘要 |
PROBLEM TO BE SOLVED: To implement miniaturization of memory cells by forming conductive films on a semiconductor substrate and by connecting side surfaces of plugs to side surfaces of the conductive films while passing the conductive films through the plugs that serve to connect interconnection layers located above the conductive films to semiconductor regions serving as storage nodes in a surface of the semiconductor substrate. SOLUTION: An insulating film is formed on the main surface of a semiconductor substrate, the insulating film serving to cover the main surface. A first polysilicon film 10 which is a conductive film for forming a capacitor is formed through the insulating film, and further a second polysilicon film 11 is formed through a thin insulating film. The connection between a first interconnection 12 and a predetermined region on the main surface of the semiconductor substrate is effected by a plug 15. The connection between the second interconnection and a predetermined region on the obverse surface of the semiconductor substrate is effected by a plug 16. Further, the formed by passing through the films 10 and 11, and the continuity of the films 10 and 11 with the plug 15 is established by means of contact between side surfaces of the films 10 and 11 with side surfaces of the plug 15. |
