| 发明名称 |
Method of making a dual damascene structure |
| 摘要 |
<p>A method for manufacturing a dual damascene structure includes the use of a sacrificial stud (12) and provides an improved defined edge on the interface between the conductive line openings (9) and the via openings (11).</p> |
| 申请公布号 |
EP0890984(A1) |
申请公布日期 |
1999.01.13 |
| 申请号 |
EP19980110288 |
申请日期 |
1998.06.05 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
GUTSCHE, MARTIN;TOBBEN, DIRK |
| 分类号 |
H01L21/28;H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
