| 摘要 |
A composite substrate 1 on which a heat-generating semiconductor device 7 is to be mounted, comprises a composite layer 2, which includes a matrix 5 made of a metal having a high thermal conductivity and a fibrous or particulate ceramic dispersion material 4 having low thermal expansion properties, and a metal layer 3 bonded by a brazing material or solder 10 to one main surface of the composite layer. The heat-generating semiconductor device 7 for a substrate 8 with low thermal expansion properties having the heat-generating semiconductor device provided thereon, is mounted on the other main surface of the composite layer, possibly via solder 6 and a metal film 9. The metal matrix 5 and the metal layer 3 may be aluminium or copper or alloys thereof. The composite substrate may be formed by pressure casting. |
