| 摘要 |
A process of forming a metal contact portion of a semiconductor device and a structure thereof are disclosed. The process includes the steps of forming an insulating layer on a semiconductor substrate in which a doped junction has been formed, photo-etching the insulating layer to form a contact hole, forming a conductive layer on a surface of the substrate so that the conductive layer contacts the contact portion through the contact hole, and photo-etching the conductive layer to form a conductive projected portion, whereby a metal layer can contact surfaces of the conductive projected portion and the contact portion of the substrate.
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