发明名称 Semiconductor yaw rate sensor
摘要 The sensor includes a substrate (1), and a movable structure (2,3) formed from a semiconductor material, and comprising at least one anchor part (4a-4d) arranged on the substrate, an weight part (7) arranged in a predetermined distance above the substrate, and at least one flexible part (5,6) which extends from the anchor part and carries the weight part. Movable electrodes (8,9) are formed on the weight part. A fixed electrode (10,12) is formed on the substrate in such way, that it lies opposite the movable electrode, whereby if a control voltage is applied at the movable electrode and the fixed electrode, the movable structure is forced to swing in a direction horizontally with respect to a substrate surface plane. A yaw rate detector (7,13) records a yaw rate based on a displacement of the structure in a direction vertically to the substrate surface plane during the forced oscillation of the structure. At least one extension measuring device (15,19) is formed in the flexible part and monitors the forced oscillation of the structure.
申请公布号 DE19828606(A1) 申请公布日期 1999.01.07
申请号 DE1998128606 申请日期 1998.06.26
申请人 DENSO CORP., KARIYA, AICHI, JP 发明人 KANO, KAZUHIKO, KARIYA, AICHI, JP;FUJITA, MAKIKO, KARIYA, AICHI, JP;OHTSUKA, YOSHINORI, KARIYA, AICHI, JP
分类号 G01L1/18;G01C19/56;G01P9/04;G01P15/00;G01P15/08;G01P15/12;H01L29/84;(IPC1-7):G01P9/04;G01B7/16;H01L49/00 主分类号 G01L1/18
代理机构 代理人
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