| 摘要 |
<p>A method of producing a thin semiconductor film comprising the step of feeding a feedstock gas into a vacuum chamber and the step of decomposing the gas by using a radio-frequency inductive-coupling plasma (ICP) produced by applying a radio-frequency electric power in order to form a predetermined thin semiconductor film on a wafer by chemical vapor-phase growth by using the decomposed gas. The crystalline state of the thin semiconductor film is controlled by controlling the temperature at which the wafer is heated in forming the thin semiconductor film.</p> |
