发明名称 |
High power HFET with improved channel interfaces |
摘要 |
A high power heterojunction field effect transistor comprising a first barrier layer including a semiconductor material having a band gap, a second barrier layer including a semiconductor material having a band gap, a channel layer including a semiconductor material having a band gap narrower than the band gaps of the material included in the first barrier layer and the second barrier layer and sandwiched therebetween and an interface layer sandwiched between the channel layer and the first barrier layer.
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申请公布号 |
US5856684(A) |
申请公布日期 |
1999.01.05 |
申请号 |
US19960712760 |
申请日期 |
1996.09.12 |
申请人 |
MOTOROLA, INC. |
发明人 |
WANG, YANG;HASHEMI, MAJID M.;EISENBEISER, KURT;HUANG, JENN-HWA |
分类号 |
H01L29/80;(IPC1-7):H01L31/032 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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