| 摘要 |
A vertical type power MOSFET made of silicon carbide includes a surface channel layer doped with nitrogen as dopant with a concentration equal to or less than 1x1015 cm-3. Accordingly, when a gate oxide film is formed on the surface channel layer, an amount of silicon nitride produced in the gate oxide film and at the interface between the gate oxide film and the surface channel layer becomes extremely small. As a result, carrier traps are prevented from being produced by silicon nitride, resulting in stable FET characteristics and high reliability to the gate oxide film. |
