| 摘要 |
The invention relates to a non-volatile nano-cristalline storage cell comprising an MOS transistor with a first dielectric layer (51) acting as a gate dielectric and a second dielectric layer (53) between which nano-crystals (52) are arranged. The gate electrode of the MOS transistor contains p<+> doped silicon so that when a negative voltage is applied to the gate electrode, holes chiefly from the channel area (4) tunnel through the first dielectric layer (51) into the nano-crystals (52). |
