| 摘要 |
<p>A technique to achieve vertical integration of CMOS devices. A Germanium seed (20) is deposited in hole (16) in an insulating oxide layer (14) on top of an amorphous silicon film (12). The hole may be over the source and/or drain regions of a thin film transistor. The structure is annealed causing lateral crystallization resulting in the formation of large grain polysilicon.</p> |
