发明名称 MANUFACTURE OF HALFTONE PHASE SHIFT MASK
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a halftone phase shift mask capable of generating a light shield pattern of an HTPSM(halftone phase shift mask) in a practical processing time. SOLUTION: Light shield pattern area data and light shield pattern removal area data are extracted from the layout data of halftone phase shift masks (S12, S13), a coordinate of a transmission light part decided in accordance with this light shield pattern area data is normalized to be registered in an array area table, the transmission light part that the coordinate is registered and crosses with the light shield pattern removal area is retrieved by referring to the array area table based on the light shield pattern removal area data (S15), regarding the retrieved transmission light part, the coordinate of a rectangular transmission light part newly generated so as to remove the part crossing with the light shield pattern removal area is registered in the array area table (S17) and the plotting data of the light shield pattern are generated from the array area table.
申请公布号 JPH10319572(A) 申请公布日期 1998.12.04
申请号 JP19970131807 申请日期 1997.05.22
申请人 SONY CORP 发明人 ASHIDA ISAO
分类号 G03F1/32;G03F1/68;H01L21/027 主分类号 G03F1/32
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