| 摘要 |
<p>PROBLEM TO BE SOLVED: To restrain generation of popping during peeling of resist on a semiconductor wafer after ion implantation and peel resist at a high rate. SOLUTION: A set layer 27 is peeled at a low temperature of at 100 deg.C or thereabout, by raising a semiconductor wafer 25 from a stage 16 with a heating means 19 by an auxiliary stage 21, and the auxiliary stage 21 is lowered after the set layer 27 is peeled to be brought into contact with the stage 16 heated by the heater 19 for peeling a normal layer 26 at the state of a high temperature of 200 to 300 deg.C.</p> |
