| 摘要 |
A method for manufacturing a semiconductor device having a metal-insulator-metal (MIM) capacitor comprises the steps of forming a first dielectric film (212) on a substrate (211), forming a MIM capacitor on the first dielectric film (212), forming a second dielectric film (216) covering the MIM capacitor, selectively removing the first and second dielectric films (212, 216) to expose the substrate surface, surface treating using a hydrochloric acid solution, forming a third dielectric film (217) on the second dielectric film (216) and the substrate (211), and forming a transistor (222) on the third dielectric film (217). The second dielectric film (216) protects the capacitor insulator film (214) of the MIM capacitor. <IMAGE> |
