发明名称 |
PHASE SHIFT MASK AND MANUFACTURING METHOD THEREOF |
摘要 |
A phase shift mask of the present invention includes a quartz substrate transmitting exposure light, a transmitting film having a predetermined transmittance formed on the main surface of quartz substrate, a light transmitting portion from which quartz substrate is exposed is formed in a predetermined region, and a phase shifter portion formed of a single material on light transmitting film converting the phase angle by approximately 180 DEG and having a transmittance of 3-20% with respect to the exposure light transmitted through light transmitting portion. As a result, a defect generated in the phase shifter portion can be easily detected with an ordinary defect inspection apparatus without deteriorating the phase shifter portion as a phase shift mask. |
申请公布号 |
KR0151883(B1) |
申请公布日期 |
1998.12.01 |
申请号 |
KR19940025683 |
申请日期 |
1994.10.07 |
申请人 |
DAINIPPON PRINTING CO.,LTD;MITSUBISHI DENKI KK;ULVAC COATING CORP. |
发明人 |
ISAO, NOBUYUKI;KAWADA, SUSUMO;YOSHIOKA, NOBUYUKI |
分类号 |
G03F1/32;G03F1/40;G03F1/68;H01L21/027 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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