| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing it in which a connection distance in the connecting part of a semiconductor chip with a substrate for mounting can made sufficiently short, and a parasitic inductance at the connecting part can be reduced without necessitating highly precise positionings, even when a transmission line is a coplanar transmission line at the time of reverse mounting a semiconductor chip with a microwave and a mm wave bands on a substrate for mounting. SOLUTION: When a semiconductor chip 1 is reversely mounted on a substrate 6 for mounting on which a high-frequency transmission line 5 is arranged, an engraved part 10 engraved in a depth larger than a difference between the height of an uppermost layer part 7 of the semiconductor chip and the height of a bonding pad is formed at one part of the mounting region of a substrate for mounting, and the semiconductor chip 1 is reversely mounted on a substrate 6 for mounting, so that the uppermost layer 7 of the semiconductor chip 1 can be housed in the engraved part 10 of the substrate for mounting. |
