| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to form an interconnect structure, which has a thin barrier layer usable for a contact hole of an increased aspect ratio and a via hole, by a method wherein the thickness of a metal nitride layer formed on a heat-resisting layer, which is located on a conductive surface and the inner walls of a channel, is formed in a thickness of a specified value or lower. SOLUTION: A barrier layer consisting of layers of first and second materials 205 and 206 is formed on the upper surface of a layer of an insulating material 201 and an exposed contact surface 204 of a layer of a conductive material 202 for forming an interconnect structure in a channel 200. The layer of the material 205 consists of a heat-resisting metal layer and is deposited on the surface of the layer of the material 201 comprising an inner walls 203 of the channel 200 and the surface 204 of the layer of the material 202, and the layer of the mateiral 206 is formed on the layer of the mateiral 205 in such a way as to superpose on the layer of the material 205. The layer of the material 206 has a less than 130Åthick thickness extending from an upper surface 207 of the layer of the material 205 in the channel 200 and consists of a metal nitride layer. Owing to this, the interconnect structure having an excellent electrical and structural completeness is obtained. |
