Etching method for silicon substrate

摘要

An etching method is provided for a silicon substrate in which a suspended bridge section is created. A mask layer including a bridge pattern is formed on the (100) plane of silicon. Defects are generated in the crystal structure of the portion of the silicon exposed by the mask. Preferably, the defects are formed by ion irradiation. Finally, the defected portions of the crystal are subjected to anisotropic etching.