| 摘要 |
PROBLEM TO BE SOLVED: To reduce the operation voltage of a semiconductor light emitting element with a good reproducibility by a method in which a plurality of semiconductor layers whose valence electron bands have hand offsets which are different from each other by specific differences between adjacent semiconductor layers are provided between a p-type ZnSSe semiconductor layer and a p-type ZnTe layer. SOLUTION: An n-type GaAs buffer layer 2, an n-type ZnSe buffer layer 3, an n-type cladding layer 4, an n-type light guide layer 5, an active layer and a ZnSSe photoguide layer 7 are made to grow on a substrate 1 to form a light emitting region. Then, a p-type nitrogen-doped ZnMgSSe cladding layer 8, a p-type nitrogen-doped ZnSSe layer 9, a p-type nitrogen-doped ZnSe layer 10, a p-type contact intermediate layer 11 and a p-type nitrogen-doped ZnTe contact layer 12 are formed. The p-type contact intermediate layer 11 is composed of p-type nitrogen-doped ZnSeTe layers 20, 21, 22 and 23 which have different Se/Te ratios and are successively formed on the p-type nitrogen-doped ZnSe layer 10 and the energy differences between the valence electron bands of adjacent 20-21, 21-22 and 22-23 are lower than 0.3 eV. |
