| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent isolation characteristic at a high-frequency region caused by assembling amount from being decreased. SOLUTION: The integrated circuit is provided with 1st and 2nd FETs 1, 2 provided between input output terminals T1, T2 and sharing input output switching, and 3rd and 4th FETs 3, 4 that are conductive when the FETs 1, 2 are nonconductive and that act as a shunt function, and a lead section connecting to a terminal T3 at a source electrode side of the FETs 3, 4 that acts as a parasitic inductive component 10, and a resistor 12 whose resistance is sufficiently higher than an impedance at a prescribed frequency exists between the source electrode and a point of a ground level is provided to the source side of the 3rd FET 3. Thus, a high-frequency voltage produced at a terminal T3 is divided by the resistor 12 and a leakage of the high-frequency signal from the 3rd FET 3 (between the drain and source) via a bypass which passes through the 4th FET 4 is reduced and the isolation characteristic is enhanced.</p> |
