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发明名称
FORMATION OF SILICIDE LAYER OF SEMICONDUCTOR DEVICE
摘要
申请公布号
JPH10303144(A)
申请公布日期
1998.11.13
申请号
JP19980052539
申请日期
1998.03.04
申请人
SAMSUNG ELECTRON CO LTD
发明人
DEN SHINKO;KIN ENCHU
分类号
H01L21/28;H01L21/4763;(IPC1-7):H01L21/28
主分类号
H01L21/28
代理机构
代理人
主权项
地址
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