Microelectronic component with diamond layer

摘要

In a microelectronic component with an external surface diamond layer produced by gas phase deposition, the diamond layer (34) is located on the component surface (6) remote from the original growth substrate (35) and has edges exhibiting an abrupt thickness change to /-10 (preferably /-50)% of the diamond layer thickness. Also claimed is a process for diamond application onto a microelectronic component by (a) depositing the component (33) on a growth substrate (35), especially of single crystal silicon, optionally using material from the growth substrate; (b) selectively providing the substrate surface (6) with growth seeds for the diamond layer; and (c) carrying out gas phase deposition of diamond in the seeded region. Preferably, the gas phase deposition is carried out by CVD, especially by an arc-jet process.