发明名称 |
Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication |
摘要 |
A longwavelength vertical cavity surface emitting laser (VCSEL) for use in optical telecommunications and method of fabrication that includes the fabrication of an active VCSEL structure on a supporting substrate and the fabrication of a highly reflective DBR mirror structure on a silicon substrate. The DBR mirror structure includes alternating layers of a silicon oxide material and a silicon material fabricated utilizing epitaxially growth techniques and/or wafer bonding using SOI wafer fusion technology. During fabrication of the final VCSEL device, the Si/SiO2 DBR mirror structure is wafer bonded to the active VCSEL structure. The active VCSEL structure supporting substrate is selectively removed, to enable positioning of a second DBR mirror stack. The final VCSEL device characterized by emitting infra-red light.
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申请公布号 |
US5835521(A) |
申请公布日期 |
1998.11.10 |
申请号 |
US19970795261 |
申请日期 |
1997.02.10 |
申请人 |
MOTOROLA, INC. |
发明人 |
RAMDANI, JAMAL;LEBBY, MICHAEL S.;JIANG, WENBIN |
分类号 |
H01S3/02;H01S5/00;H01S5/02;H01S5/183;(IPC1-7):H01S3/19 |
主分类号 |
H01S3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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