Production of sharp-edged polyimide patterns on silicon chips

摘要

A process for the production of a polyimide (PI) pattern on a substrate comprises (A) making a solution in an organic solvent of a polyamide-acid (PAA) and 1-10 wt.% of a light- sensitive system which becomes more soluble in an aqueous basic developer when exposed to light, (B) coating this solution onto a substrate, (C) evaporating the solvent, (D) applying a positive photoresist, (E) irradiating with a pattern of photochemically active light, (F) removing the exposed parts of the resist, (G) removing the exposed parts of the coating with aqueous developer, (H) removing the remaining resist and (I) imidating the rest of the PAA coating. Also claimed is (i) an object made by this process; (ii) a process for the production of a PI pattern with vertical sides; and (iii) a process for the production of a polyimide-siloxane (PIS) pattern.