| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus in which the reaction time of a chemical amplification resist can be controlled with good accuracy and in which the chemical reaction of the resist is not obstructed. SOLUTION: A substrate treatment apparatus is provided with an indexer unit 10 by which a substrate W is carried in and out with reference to a cassette C, with a process unit 20 in which a required treatment is executed to the substrate W and with an interface unit 30 which delivers the substrate between itself and an aligner 200. The substrate W which is exposed by the aligner 200 is edge-exposed by an edge exposure part 50 inside the interface unit 30, it is then heated and cooled by a heat treatment part 40, and the chemical reaction of a resist film is completed. In addition, when an adhesion treatment part 12 is installed at the indexer unit 10, a gas which is generated in the adhesion treatment part 12 does not have a bad influence on the chemical reaction of the resist film. |
