发明名称 GOLD ALLOY WIRE FOR BONDING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To protect a gold alloy wire against disconnection, even if a semiconductor device is exposed to an environment of severe heat cycles by a method, wherein the gold alloy wire is formed of material composed of a prescribed amount of Ag, a prescribed amount of an element selected out of Pd and Pt, a prescribed amount of an element selected from among Y, La, Ru, Ir, Eu, Yb, Gd, and Be, and gold and unavoidable impuritiess as the rest. SOLUTION: A prescribed amount of Ag, a prescribed amount of an element selected from among Pd and Pt, a prescribed amount of an element selected out of Y, La, Ru, Ir, Eu, Yb, Gd, and Be are added to high-purity gold of purity 99.999 wt%, which are melted in a vacuum melting furnace and then cast into a gold alloy ingot. The gold alloy ingot is subjected to cold working by the use of a fluted roll and a wire drawing machine and then undergoes both intermediate and final annealing, whereby a gold alloy wire is manufactured. By this setup, even if a semiconductor device provided with a copper alloy lead frame is exposed to an environment of severe heat cycles, a gold alloy wire of this constitution can be protected against disconnection.
申请公布号 JPH10275820(A) 申请公布日期 1998.10.13
申请号 JP19970077794 申请日期 1997.03.28
申请人 TANAKA DENSHI KOGYO KK 发明人 MURAI HIROSHI;TAKAURA SHIN;MIMURA TOSHITAKA
分类号 H01L21/60;C22C5/02;H01B1/02 主分类号 H01L21/60
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