| 发明名称 |
Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors |
| 摘要 |
A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a small amount of leakage current. Besides the dynamic circuit, a CMOS circuit comprising both NMOS and PMOS thin-film transistors is constructed to drive the dynamic circuit.
|
| 申请公布号 |
US5821559(A) |
申请公布日期 |
1998.10.13 |
| 申请号 |
US19950413885 |
申请日期 |
1995.03.30 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;TAKEMURA, YASUHIKO |
| 分类号 |
G02F1/1362;G02F1/1368;G09G3/36;H01L21/336;H01L21/60;H01L21/77;H01L21/82;H01L21/84;H01L27/12;H01L29/49;H01L29/786;(IPC1-7):H01L29/04;H01L29/78 |
主分类号 |
G02F1/1362 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
