MANUFACTURE OF SEMICONDUCTOR INERTIA SENSOR

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor inertia sensor that eliminates the need for laser processing and sticking of a wafer, and which is suitable for high volume production and excellent in interelectrode gap formation accuracy with the low cost. SOLUTION: A glass spacer layer 13 is provided at a predetermined portion on a silicon substrate 10. The silicon substrate 10 is joined with one surface of a silicon wafer 21 through the glass spacer layer 13. The silicon wafer 21 is selectively etched and removed, and then a semiconductor inertia sensor 30 is constructed which comprises a pair of fixed electrodes 27, 28 comprising single crystal silicon joined on the silicon substrate 10 and a movable electrode 26 comprising single crystal silicon floating above the silicon substrate 10.