| 摘要 |
PROBLEM TO BE SOLVED: To relax the internal stress due to the restriction for terminals and avoid the crack or void defects, by injecting and hardening a first layer resin of two silicone insulation resin layers at a position not contacting auxiliary lead terminals at the outside and lower parts of the support block posts. SOLUTION: A silicone insulation resin 12 of a first layer is injected at a position not contacting auxiliary lead terminals 7a at the outside and lower parts of the support block posts 5c, vacuum-defoamed and heated to harden. The defoaming in this step never causes the silicone resin to contact a terminal block lower face 5b above a semiconductor device. At heating to harden, the resin 12a locates at a level not reaching the auxiliary lead terminals 7a at the outside and lower parts of the support block posts 5c and hence no restriction of the resin 12a occurs. |
