LASER COMPRISING STACKED LASER DIODES PRODUCED BY EPITAXIAL GROWTH INSERTED BETWEEN TWO BRAGG MIRRORS

摘要

The invention concerns a laser comprising a stack of laser diodes inserted between two mirrors so as to produce a laser cavity, the stacking of diodes being produced by epitaxial growth of an assembly of semiconductor layers. The ohmic contact between two adjacent laser diodes is provided by an Esaki-type diode junction and the optical field of the mode generated in the laser cavity is periodically cancelled at the Esaki-type diode junction so as to produce structures of small dimensions. The invention is applicable to power laser.