发明名称 |
MANUFACTURE OF VACUUM MICRO ELEMENT |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method of a vacuum micro element using diamond on its emitter. SOLUTION: A silicon board 102 is coated on its surface with an oxide film serving as a gate insulating layer 101 and further a molybdenum(Mo) film serving as a gate electrode layer 103 is formed. The insulating layer 101 and the electrode layer 103 is partly etched to form an opening, in which diamond is grown. The diamond is raised there into the shape of a circular cone so as to gradually close the opening. The diamond depositing on the Mo layer 103 is finally peeled off to finish a vacuum micro element.</p> |
申请公布号 |
JPH10261361(A) |
申请公布日期 |
1998.09.29 |
申请号 |
JP19970065642 |
申请日期 |
1997.03.19 |
申请人 |
TOSHIBA CORP |
发明人 |
SAKUMA HISASHI;SAKAI TADASHI;ONO TOMIO |
分类号 |
H01J9/02;H01J1/30;H01J1/304;H01J19/24;H01J29/04;H01J31/12;(IPC1-7):H01J9/02 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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