| 摘要 |
<p>A method in a variable-gap plasma processing chamber for controlled removal of at least a portion of an upper crust of a photoresist layer disposed above a substrate. The upper crust represents a hardened upper layer of the photoresist layer. The method includes loading the substrate into the variable-gap plasma processing chamber. The method further includes flowing an ash source gas comprising O2 into the variable-gap plasma processing chamber. The ash source gas is substantially free of an O2 bombarding gas. The method further includes performing the controlled removal of at least the portion of the upper crust of the photoresist layer with a plasma struck from the ash source gas while a gap between an upper surface of the substrate and an upper electrode of the variable-gap plasma processing chamber is maintained at a predefined wide gap distance. Preferably, the predefined wide gap distance represents a distance sufficiently wide for the substrate to be loaded into the variable-gap plasma chamber without having to alter the gap.</p> |
