发明名称 |
Field effect transistor |
摘要 |
A field effect transistor includes a semi-insulating III-V compound semiconductor substrate; a channel layer disposed on the substrate; an n type electron supply layer disposed on the channel layer and comprising a mixed crystalline compound semiconductor layer including AlAs; an n type ohmic contact layer disposed on the electron supply layer; source and drain electrodes disposed on the ohmic contact layer; an opening in a region between the source and drain electrodes penetrating the ohmic contact layer; a gate electrode disposed in the opening and making a Schotty contact; and a surface protection film of a semiconductor material free of Al, In, and As, covering the opening except where the gate electrode is present. Fluorine is prevented from getting into the electron supply layer with no increase in transconductance or source resistance by providing a layer between the source and a channel, and between the gate and the channel.
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申请公布号 |
US5811843(A) |
申请公布日期 |
1998.09.22 |
申请号 |
US19970805363 |
申请日期 |
1997.02.24 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YAMAMOTO, YOSHITSUGU;HAYAFUJI, NORIO |
分类号 |
H01L29/812;H01L21/338;H01L29/778;(IPC1-7):H01L29/778 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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