Temperature-measuring-resistor, manufacturing method therefor, and infrared - ray detecting element using the same

摘要

The invention relates to a temperature-measuring-resistor which comprises vanadium oxide as a matrix material. The matrix material further contains at least one member selected from a metal, a metal oxide and a metal nitride, and the member has an electric conductivity higher than that of the vanadium oxide. The temperature-measuring-resistor has a low room temperature resistivity, and a volume resisivity that varies greatly with temperature.