发明名称 |
Method of forming an interband lateral resonant tunneling transistor |
摘要 |
This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices.
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申请公布号 |
US5804475(A) |
申请公布日期 |
1998.09.08 |
申请号 |
US19960665931 |
申请日期 |
1996.06.19 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
MEYER, JERRY R.;HOFFMAN, CRAIG A.;BARTOLI, JR., FILBERT J. |
分类号 |
H01L29/12;H01L29/772;H01L29/812;(IPC1-7):H01L21/20;H01L21/28 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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