| 摘要 |
PROBLEM TO BE SOLVED: To make threshold of a plurality of lasers uniform by a method wherein a part of the light-emitting region of a vertical resonator-type surface emitting laser is formed, by a selective growth, in an opening in a selection mask such as a dielectric or the like which has a closed shape. SOLUTION: A part of the light-emitting region 2 of every vertical resonator- type surface emitting laser is manufactured by a selective growth which uses a selection mask 1. At this point, the area of the selection mask 1 is changed, the thickness or the composition of a crystal which is grown in an opening in the mask is changed, and a plurality of vertical resonator-type surface emitting lasers are formed on the same substrate. In this manner, when the light- emitting region 2 of every surface emitting laser is formed, by the selective growth, in the opening in the selection mask 1 composed of a dielectric or the like, the area of the mask is changed, a growth speed or the like is changed, and a multiple-wavelength surface emitting laser array in which a resonator length or the like is different can be manufactured. |
