| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor luminescence device with high luminous intensity steadily and increase a yield in process in an electrode and chip forming step. SOLUTION: A first n-type clad layer 103 made of Alx Ga1-x As (0.5<=x<=1) with lattice constant of a1 , a second n-type clad layer 104 made of (AlGa)InP with lattice constant of a2 , an (AlGa)InP active layer 105 with lattice constant of a3 , a first p-type clad layer 106 made of (AlGa)InP with lattice constant of a4 , and a second p-type clad layer 107 made of Aly Ga1-y As are formed on a substrate 101 with lattice constant of a0 . In this case, the (AlGa)InP active layer 105 with lattice constant of a3 is aligned in lattice with the first n-type clad layer 103 made of first conductive-type Alx Ga1-x As, in such a way that a lattice mismatching ratio of (a1 -a3 )/a1 is from -0.005 to 0.002. |
