| 摘要 |
PROBLEM TO BE SOLVED: To prevent the swelling and cracking of a cover film by degassing a polyimide resin film through heat treatment after covering the resin with an insulating film which suppresses the passage of a resulted product of an amidating reaction, because the polyimide resin layer passes water when the film is heated to a prescribed temperature. SOLUTION: After first-layer aluminum wiring 2-1, 2-2,... is formed on an insulating film 1, a silicon oxide film 3 is deposited on the wiring and a silicon- polyimide layer 4 is formed as an interlayer insulating film. Then a through hole 5 is formed on the wiring 2-1 and a second-layer aluminum wiring 6 is formed. Thereafter, a P-CVD silicon oxide film 8 is formed by the CVD method, particularly, the plasma CVD method and heat treatment (degassing treatment) is performed in an N2 atmosphere. After heat treatment, a cover film 7A is formed by depositing a silicon nitride film by the plasma CVD method. When a semiconductor device is formed in the above-mentioned manner, the cracking and swelling of the cover film 7A can be prevented. |
