| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for converting the exposed surfaces of a silicon substrate and a polysilicon gate electrode into amorphous state, while preventing undesirable implantation in a channel region of the substrate, and preventing damages on a gate oxide. SOLUTION: Portions to be converted into metal silicide on the surfaces of a silicon substrate 2 and a polysilicon gate electrode 20 are converted into an amorphous state. Then, amorphous silicon is reacted with the silicon substrate and a metal layer provided on the polysilicon gate electrode. In this case, the exposed surface of the silicon substrate 2 and the surface of the polysilicon gate electrode are subjected to ion-implantation by application of amorphous ion beams 40 from the direction of an angleαwhich is from 15 to 60 deg. with respect to a line A which intersects the flat surface of the silicon substrate at right angles. By applying the beams from this direction, the implanted ions are prevented from reaching through the gate electrode 20, to a gate oxide 14 located therebeneath, or further to a channel 10 having an MOS structure, that is, channeling phenomenon is thus prevented from occurring.
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