发明名称 |
Group-III nitride based light emitter |
摘要 |
A group-III nitride based light emitter such as LED and LD, which has a double heterostructure and which comprises a diffusion suppressive layer between a p-type cladding layer and an active layer. The diode having a diffusion suppressive layer of the present invention has higher luminous intensity, greater forward voltage, and longer lifetime than the conventional diodes.
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申请公布号 |
US5793061(A) |
申请公布日期 |
1998.08.11 |
申请号 |
US19960703482 |
申请日期 |
1996.08.28 |
申请人 |
MITSUBISHI CABLE INDUSTRIES, LTD. |
发明人 |
OHUCHI, YOUICHIRO;OKAGAWA, HIROAKI;WATABE, SHINICHI;TADATOMO, KAZUYUKI |
分类号 |
H01L33/32;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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