| 摘要 |
FIELD: optoelectronic engineering. SUBSTANCE: when manufacturing silicon photoconverter, p-n barrier is created in semiconductor plate utilizing diffusion technique. Then, film of doped silicate glass is formed on the surface of plate and, above it, antireflecting coating of aluminum oxide, or tin oxide, or cerium oxide, or titanium oxide, or niobium oxide, or tantalum oxide, or silicon nitride. Film of doped silicate glass is further utilized for the second diffusion step followed by opening contact windows, while simultaneously removing glass in 2.5- 20% hydrofluoric acid solution. . EFFECT: facilitated procedure. 1 tbl |
