SEMICONDUCTOR DEVICE, MODULE, AND ELECTRONIC DEVICE

摘要

To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitor includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.

主权项

1. A semiconductor device comprising:
a first conductor and a second conductor; a first insulator in contact with a top surface of the first conductor and a top surface of the second conductor; a second insulator over the first insulator; an oxide semiconductor overlapping with the first conductor with the first insulator and the second insulator interposed therebetween; a third insulator over the oxide semiconductor; a third conductor overlapping with the oxide semiconductor with the third insulator interposed therebetween; a fourth insulator over and in contact with the third conductor, a side surface of the third insulator, the oxide semiconductor, and the first insulator; a fifth insulator over the fourth insulator; a fourth conductor in contact with the oxide semiconductor; a fifth conductor in contact with the oxide semiconductor; and a sixth conductor overlapping with the second conductor with the first insulator and the fourth insulator interposed therebetween.